Photogenerated carrier collection in semiconductors with low mobility-lifetime productsGALLUZZI, F.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 4, pp 685-690, issn 0022-3727Article

A reciprocity theorem for charge collectionDONOLATO, C.Applied physics letters. 1985, Vol 46, Num 3, pp 270-272, issn 0003-6951Article

Charge carrier generation and exciton quenching at M3EH-PPV/small-molecule and M3EH-PPV/oxide interfacesBROWN, K. E; BREEZE, A. J; RUMBLES, G et al.sans titre. 2002, pp 1186-1189, isbn 0-7803-7471-1, 4 p.Conference Paper

Slope to intercept ratio of low-field photodegeneration efficiency in β-metal-free phthalocyaninePOPOVIC, Z. D; MESBAH, S.Chemical physics letters. 1993, Vol 215, Num 6, pp 636-640, issn 0009-2614Article

Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effectsCLARYSSE, T; VANDERVORST, W; CASEL, A et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2856-2858, issn 0003-6951Article

Hot-carrier generation in submicrometer VLSI environmentSAKURAI, T; NOGAMI, K; KAKUMU, M et al.IEEE journal of solid-state circuits. 1986, Vol 21, Num 1, pp 187-192, issn 0018-9200Article

Photoinduced free carrier yields in high fields : Field dependent distribution functionsSMIRNOV, S. N; BRAUN, C. L.The Journal of imaging science and technology. 1999, Vol 43, Num 5, pp 425-429, issn 1062-3701Article

Internal charge generation in polyvinylidene fluoride films during polingEISENMENGER, W; SCHMIDT, H.International symposium on electrets. 1999, pp 635-638, isbn 0-7803-5025-1Conference Paper

Electron-beam-induced currents collected by a p-n junction of finite junction depthSOUKUP, R. J; EKSTRAND, P.Journal of applied physics. 1985, Vol 57, Num 12, pp 5386-5395, issn 0021-8979Article

Determination of generation time and surface generation velocity from voltage step responses of current and capacitance on MOS capacitorSHIBATA, A; KITA, K.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1984, Vol 67, Num 1, pp 1-4, issn 0387-236XArticle

Minimum probability of electron-hole pair generation by blackbody radiationCHENG-HSIAO WU.Journal of applied physics. 1985, Vol 58, Num 1, pp 575-578, issn 0021-8979Article

Collection length of photogenerated minority carriersGALLUZZI, F.Journal of physics. D, Applied physics (Print). 1983, Vol 16, Num 12, pp L261-L262, issn 0022-3727Article

Analytical model and qualitative analysis of the interface-trap charge pumping characteristics of MOS structureHABAS, P.International conference on microelectronic. 1997, pp 605-610, isbn 0-7803-3664-X, 2VolConference Paper

Charge carrier generation in phenothiazine crystalKURABAYASHI, A; KOTANI, M.Molecular crystals and liquid crystals (1969). 1990, Vol 183, pp 193-196, issn 0026-8941Conference Paper

Characterization of dark current non-uniformities in charge-coupled devicesVAN DER SPIEGEL, J; DECLERCK, G. J.Solid-state electronics. 1984, Vol 27, Num 2, pp 147-154, issn 0038-1101Article

Génération de porteurs de charge hors d'équilibre dépendant du spinBORISOV, F. I; STRIKHA, V. I; TRETYAK, O. V et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 9, pp 1552-1555, issn 0015-3222Article

Transition rate for impact ionization in the approximation of a parabolic band structureGEIST, J; GLADDEN, W. K.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4833-4840, issn 0163-1829Article

Oxidative doping studies of PPV oligomersSPANGLER, C. W; HALL, T. J.Synthetic metals. 1991, Vol 44, Num 1, pp 85-93, issn 0379-6779, 9 p.Article

FIELD ENHANCED CARRIER GENERATION IN MOS-CAPACITORS CONTAINING DEFECTSWERNER C; EDER A; BERNT H et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 275-279; BIBL. 10 REF.Article

CONTROL OF TRAPATT OSCILLATIONS BY OPTICALLY GENERATED CARRIERS.KIEHL RA; EERNISSE EP.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 275-277; BIBL. 4 REF.Article

CHARGE-CARRIER GENERATION IN ANTHRACENE BY THE SINGLET-SINGLET COLLISION-IONIZATION PROCESS AND THE SINGLET PHOTOIONIZATION PROCESS.KAINO H.1978; MOLEC. CRYST. LIQUID CRYST.; GBR; DA. 1978; VOL. 46; NO 1-2; PP. 1-9; BIBL. 18 REF.Article

GENERATION THERMIQUE DE PORTEURS PAR DES CENTRES SUPERFICIELS APRES CHANGEMENT DE POLARISATION D'UNE STRUCTURE MDS EN REGIME D'INVERSIONKAPLAN GD; NOGIN VM.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 10; PP. 1964-1969; BIBL. 5 REF.Article

DETERMINATION OF SURFACE- AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURESBROTHERTON SD; GILL A.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 890-892; BIBL. 12 REF.Article

Large Integrated Absorption Enhancement in Plasmonic Solar Cells by Combining Metallic Gratings and Antireflection CoatingsMUNDAY, Jeremy N; ATWATER, Harry A.Nano letters (Print). 2011, Vol 11, Num 6, pp 2195-2201, issn 1530-6984, 7 p.Article

Unconventional approaches to combine optical transparency with electrical conductivity : Transparent conducting oxides (TCO)MEDVEDEVA, J. E.Applied physics. A, Materials science & processing (Print). 2007, Vol 89, Num 1, pp 43-47, issn 0947-8396, 5 p.Article